JPH0423447B2 - - Google Patents

Info

Publication number
JPH0423447B2
JPH0423447B2 JP61104292A JP10429286A JPH0423447B2 JP H0423447 B2 JPH0423447 B2 JP H0423447B2 JP 61104292 A JP61104292 A JP 61104292A JP 10429286 A JP10429286 A JP 10429286A JP H0423447 B2 JPH0423447 B2 JP H0423447B2
Authority
JP
Japan
Prior art keywords
electrode
circuit
semiconductor element
node
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61104292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62261217A (ja
Inventor
Hiroshi Minami
Shigeaki Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61104292A priority Critical patent/JPS62261217A/ja
Priority to US07/046,509 priority patent/US4767942A/en
Publication of JPS62261217A publication Critical patent/JPS62261217A/ja
Priority to US07/218,888 priority patent/US4907201A/en
Priority to US07/338,896 priority patent/US5063305A/en
Publication of JPH0423447B2 publication Critical patent/JPH0423447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45364—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and sources only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45712—Indexing scheme relating to differential amplifiers the LC comprising a capacitor as shunt

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
JP61104292A 1986-05-07 1986-05-07 Ｍｏｓトランジスタ回路 Granted JPS62261217A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61104292A JPS62261217A (ja) 1986-05-07 1986-05-07 Ｍｏｓトランジスタ回路
US07/046,509 US4767942A (en) 1986-05-07 1987-05-06 Current mirror amplifier circuit
US07/218,888 US4907201A (en) 1986-05-07 1988-07-14 MOS transistor circuit
US07/338,896 US5063305A (en) 1986-05-07 1989-04-14 Current mirror amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61104292A JPS62261217A (ja) 1986-05-07 1986-05-07 Ｍｏｓトランジスタ回路

Publications (2)

Publication Number Publication Date
JPS62261217A JPS62261217A (ja) 1987-11-13
JPH0423447B2 true JPH0423447B2 (en]) 1992-04-22

Family

ID=14376856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61104292A Granted JPS62261217A (ja) 1986-05-07 1986-05-07 Ｍｏｓトランジスタ回路

Country Status (2)

Country Link
US (1) US4767942A (en])
JP (1) JPS62261217A (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907201A (en) * 1986-05-07 1990-03-06 Mitsubishi Denki Kabushiki Kaisha MOS transistor circuit
DE68905658T2 (de) * 1988-05-16 1993-10-07 Philips Nv Schaltung zum Erzeugen eines impulsförmigen Signals.
US5159425A (en) * 1988-06-08 1992-10-27 Ixys Corporation Insulated gate device with current mirror having bi-directional capability
US5019729A (en) * 1988-07-27 1991-05-28 Kabushiki Kaisha Toshiba TTL to CMOS buffer circuit
US5187396A (en) * 1991-05-22 1993-02-16 Benchmarq Microelectronics, Inc. Differential comparator powered from signal input terminals for use in power switching applications
JP2748950B2 (ja) * 1991-12-25 1998-05-13 日本電気株式会社 パワーオンリセット回路
WO1993025005A1 (en) * 1992-05-22 1993-12-09 Indiana University Foundation Area-efficient implication circuits for very dense lukasiewicz logic arrays
US6479974B2 (en) * 2000-12-28 2002-11-12 International Business Machines Corporation Stacked voltage rails for low-voltage DC distribution
WO2014034084A1 (en) * 2012-08-27 2014-03-06 Ps4 Luxco S.A.R.L. Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS61139107A (ja) * 1984-12-11 1986-06-26 Nec Corp 演算増幅器

Also Published As

Publication number Publication date
JPS62261217A (ja) 1987-11-13
US4767942A (en) 1988-08-30

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